Quantum Optomechanics with Silicon Nanostructures
نویسنده
چکیده
Mechanical resonators are the most basic and ubiquitous physical systems known. In on-chip form, they are used to process high frequency signals in every cell phone, television, and laptop. They have also been in the last few decades in different shapes and forms, a critical part of progress in quantum information sciences with kilogram-scale mirrors for gravitational wave detection measuring motion at its quantum limits, and the motion of single ions being used to link qubits for quantum computation. Optomechanics is a field primarily concerned with coupling light to the motion of mechanical structures. This thesis contains descriptions of recent work with mechanical systems in the megahertz to gigahertz frequency range, formed by nanofabricating novel photonic/phononic structures on a silicon chip. These structures are designed to have both optical and mechanical resonances, and laser light is used to address and manipulate their motional degrees of freedom through radiation pressure forces. We laser cool these mechanical resonators to their ground states, and observe for the first time the quantum zero-point motion of a nanomechanical resonator. Conversely, we show that engineered mechanical resonances drastically modify the optical response of our structures, creating large effective optical nonlinearities not present in bulk silicon. We experimentally demonstrate aspects of these nonlinearities by proposing and observing “electromagnetically induced transparency” and light slowed down to 6 m/s, as well as wavelength conversion, and generation of nonclassical optical radiation. Finally, the application of optomechanics to longstanding problems in quantum and classical communications are proposed and investigated.
منابع مشابه
Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study
A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...
متن کاملCorrelation Between Surface Morphology and Optical Properties of Quasi-Columnar Porous Silicon Nanostructures
In the current work, the effect of surface morphology on light emission property and absorption behavior of quasi-columnar macro-porous silicon (PS) was investigated. PS structures with different morphology were synthesized using photo-electrochemical etching method by applying different etching current densities. SEM micrographs showed that empty macro-pores size and porosity of PS layers were...
متن کاملElectronic Properties of Hydrogen Adsorption on the Silicon- Substituted C20 Fullerenes: A Density Functional Theory Calculations
The B3LYP/6-31++G** density functional calculations were used to obtain minimum geometries and interaction energies between the molecular hydrogen and nanostructures of fullerenes, C20 (cage), C20 (bowl), C19Si (bowl, penta), C19Si (bowl, hexa). The H2 molecule is set as adsorbed in the distance of 3Å at vertical position from surface above the pentagonal and hexagonal sites of nanostructures. ...
متن کاملRemote macroscopic entanglement on a photonic crystal architecture
The outstanding progress in nanostructure fabrication and cooling technologies allows what was unthinkable a few decades ago: bringing single-mode mechanical vibrations to the quantum regime. The coupling between photon and phonon excitations is a natural source of nonclassical states of light and mechanical vibrations, and its study within the field of cavity optomechanics is developing lightn...
متن کاملStudy of dry oxidation of triangle-shaped silicon nanostructure
Silicon nanostructures along @011# direction with upside down triangle cross sections on the top of the sawtooth structure with ~111! facets are prepared by using the lithography technique, reactive ion etching, and anisotropic wet chemical etching. These triangle-shaped silicon nanostructures are thermally oxidized in dry oxygen over a range of temperature from 850 to 1000 °C, which is charact...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2013